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Struttura Dipartimento di Fisica e Astronomia "Galileo Galilei"
Telefono 0498277001
Qualifica Professore associato confermato
Settore scientifico FIS/03 - FISICA DELLA MATERIA
Rubrica di Ateneo  Visualizza

Orario di ricevimento
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(aggiornato il 27/11/2015 14:45)

Proposte di tesi
Hyperdoping of Semiconductors by Pulsed Laser Melting

The detailed topics of the thesis will be agreed according to the particular student's interest and the actual research needs, in the field of PLM processing of semiconductors.

Pulsed Laser Melting (PLM) has proven a beneficial potential to improve the electrical, structural and optical properties of semiconductors for advanced devices in nanoelectronics, photonics, plasmonics, gamma-ray detections, etc.. In fact, PLM allows extremely fast dynamics (nanoseconds) of surface melting and recrystallization, which allows the synthesis of shallow layers with properties not accessible with conventional equilibrium thermal processes.

For example, a possible thesis activity could be the study of the hyperdoping (i.e. doping above the solubility limit) of Ge by PLM. Samples will be processed at the new laboratory for Laser Processing at the DFA and then characterized to understand, as a function of the processing conditions: the dopant diffusion and incorporation during melting/recrystallization; the electrical properties of the doped layers (carrier concentration and mobility); the evolution of the surface morphology; and the strain. The data will be analyzed with the help of a PLM simulation code.

The student will acquire several skills including the fundamentals on different processing and characterization techniques such as pulsed UV Laser Processing, VdP-Hall, SIMS, AFM, HRXRD and notions on the physics of non-equilibrium doping processes and on the properties of hyperdoped semiconductor materials.

Curriculum Vitae
Born in 1969, Enrico Napolitani received the Master Degree in Physics in 1996 (University of Padova) and the PhD in Material Science in 2000 (University of Catania). From 2000 to 2014 he has been Research Scientist at CNR-IMM Matis (Padova, Italy).

From 2014 is Associate Professor in Matter Physics at the University of Padova, where he holds courses on General Physics and on Physics and Technology of Semiconductors, and coordinates the laboratories of Secondary Ion Mass Spectrometry, Van der Pauw-Hall and Rapid and Laser Thermal Processing at the Department of Physics and Astronomy. Currently, he is also associated member of the CNR-IMM institute and INFN-Laboratori Nazionali di Legnaro, where he carries out part of his research activities.

He is member of Editorial Board of the Journal 'Material Science in Semiconductor Processing' (Elsevier), and member of the Board of Delegates of the European Material Research Society. He tutored several Master and PhD degree thesis, and is member of the teaching board of the PhD School in Physics at the University of Padova.

He holds 219 publications in peer-reviewed journals with 2600 total citations (H-index 29), 3 books, 1 international patent, invited presentations at international conferences, organization of international symposia and conferences, memberships at international and editorial committees.

Aree di ricerca
His research focuses on the physics and technology of semiconductors for nano- and opto-electronics, with emphasis on diffusion, electrical activation and defect evolution phenomena related with advanced doping processes of Si and Ge.

Major achievements include the description of the diffusion and activation phenomena involved in the realization of shallow junctions in Si and Ge, and the development of defect engineering strategies and advanced processing methods for their control, including co-doping and ultra-fast and laser annealing.

Currently, he is investigating different processing methods, including the pulsed laser melting, to improve the doping and structural properties of Ge/Si layers for nanoelectronic, optoelectronic and sensor applications.

Enrico Napolitani also has internationally recognized skills in the chemical depth profiling of solids, with applications in several fields also outside semiconductor physics.

With the aim of providing an overview of the recent progresses in semiconductor doping and stimulating research in this field, he edited in 2017 the special issue “Advanced doping methods in semiconductor devices and nanostructures” (Corresponding Editors: E. Napolitani, J. Williams, R. Duffy) in the journal Material Science in Semiconductor Processing (Elsevier).

(1) Arduca, E.; Seguini, G.; Martella, C.; Lamperti, A.; Napolitani, E.; De Salvador, D.; Nicotra, G.; Scuderi, M.; Spinella, C.; Perego, M. Electronic Band Structures of Undoped and P-Doped Si Nanocrystals Embedded in SiO 2. J. Mater. Chem. C 2018, 6 (1), 119–126
(2) Sgarbossa, F.; Carturan, S. M.; De Salvador, D.; Rizzi, G. A.; Napolitani, E.; Maggioni, G.; Raniero, W.; Napoli, D. R.; Granozzi, G.; Carnera, A. Monolayer Doping of Germanium by Phosphorus-Containing Molecules. Nanotechnology 2018, 29 (46), 465702
(3) Pastor, D.; Gandhi, H. H.; Monmeyran, C. P.; Akey, A. J.; Milazzo, R.; Cai, Y.; Napolitani, E.; Gwilliam, R. M.; Crowe, I. F.; Michel, J.; Kimerling, L. C.; Agarwal, A.; Mazur, E.; Aziz, M. J. High Level Active n + Doping of Strained Germanium through Co-Implantation and Nanosecond Pulsed Laser Melting. J. Appl. Phys. 2018, 123 (16), 165101
(4) Boninelli, S.; Milazzo, R.; Carles, R.; Houdellier, F.; Duffy, R.; Huet, K.; La Magna, A.; Napolitani, E.; Cristiano, F. Nanoscale Measurements of Phosphorous-Induced Lattice Expansion in Nanosecond Laser Annealed Germanium. APL Mater. 2018, 6 (5), 058504
(5) O’Connell, J.; Napolitani, E.; Impellizzeri, G.; Glynn, C.; McGlacken, G. P.; O’Dwyer, C.; Duffy, R.; Holmes, J. D. Liquid-Phase Monolayer Doping of InGaAs with Si-, S-, and Sn-Containing Organic Molecular Layers. ACS Omega 2017, 2 (5), 1750–1759
(6) Frigerio, J.; Ballabio, A.; Gallacher, K.; Gilberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D. J.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G. Optical Properties of Highly N-Doped Germanium Obtained by in-Situ Doping and Laser Annealing. J. Phys. D. Appl. Phys. 2017
(7) Frigerio, J.; Ballabio, A.; Isella, G.; Sakat, E.; Pellegrini, G.; Biagioni, P.; Bollani, M.; Napolitani, E.; Manganelli, C.; Virgilio, M.; Grupp, A.; Fischer, M. P.; Brida, D.; Gallacher, K.; Paul, D. J.; Baldassarre, L.; Calvani, P.; Giliberti, V.; Nucara, A.; Ortolani, M. Tunability of the Dielectric Function of Heavily Doped Germanium Thin Films for Mid-Infrared Plasmonics. Phys. Rev. B 2016, 94 (8), 085202
(8) Perego, M.; Seguini, G.; Arduca, E.; Frascaroli, J.; De Salvador, D.; Mastromatteo, M.; Carnera, A.; Nicotra, G.; Scuderi, M.; Spinella, C.; Impellizzeri, G.; Lenardi, C.; Napolitani, E. Thermodynamic Stability of High Phosphorus Concentration in Silicon Nanostructures. Nanoscale 2015, 7 (34), 14469–14475
(9) Napolitani, E.; Impellizzeri, G. Ion Implantation Defects and Shallow Junctions in Si and Ge. In Defects in Semiconductors; Elsevier - Academic Press, 2015; Vol. 91, pp 93–122.
(10) Milazzo, R.; Napolitani, E.; Impellizzeri, G.; Fisicaro, G.; Boninelli, S.; Cuscunà, M.; De Salvador, D.; Mastromatteo, M.; Italia, M.; La Magna, A.; Fortunato, G.; Priolo, F.; Privitera, V.; Carnera, A. N-Type Doping of Ge by As Implantation and Excimer Laser Annealing. J. Appl. Phys. 2014, 115 (5), 053501
(11) Pelizzo, M. G.; Corso, A. J.; Tessarolo, E.; Böttger, R.; Hübner, R.; Napolitani, E.; Bazzan, M.; Rancan, M.; Armelao, L.; Jark, W.; Eichert, D.; Martucci, A. Morphological and Functional Modifications of Optical Thin Films for Space Applications Irradiated with Low-Energy Helium Ions. ACS Appl. Mater. Interfaces 2018, 10 (40), 34781–34791

Insegnamenti dell'AA 2019/20
Corso di studio (?) Curr. Codice Insegnamento CFU Anno Periodo Lingua Responsabile
SC1163 COMUNE SC06103110 11 I Secondo
SC1174 COMUNE SCP9087650 8 I Primo
SC2382 002PD SCP7081797 6 II Primo